| PART |
Description |
Maker |
| RJK0854DPB-00-J5 |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| ADP1173AN-12 ADP1173AN-33 ADP1173AR-33 ADP1173 ADP |
Micropower DC-DC Converter
RECTIFIER SCHOTTKY SINGLE 1A 80V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO 1.5 A SWITCHING REGULATOR, 32 kHz SWITCHING FREQ-MAX, PDIP8
RECTIFIER SCHOTTKY DUAL 40A 60V 375A-ifsm 0.7V-vf 1mA-ir TO-3P 30/TUBE
RECTIFIER SCHOTTKY SINGLE 1A 90V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/REEL-13
|
http://
Analog Devices, Inc.
|
| UTT25N08G-TN3-R UTT25N08G-TN3-T UTT25N08L-TN3-T UT |
25A, 80V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RJK0855DPB RJK0855DPB-15 |
80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching
80V, 30A, 11 m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| HIP408206 HIP4082IPZ HIP4082 HIP4082IB HIP4082IBZ |
80V, 1.25A Peak Current H-Bridge FET Driver
|
INTERSIL[Intersil Corporation]
|
| RFK25P08 RFH25P08 RFH25P10 |
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| RJK0852DPB RJK0852DPB-00-J5 RJK0852DPB-13 |
80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| BYP54-800 BYP53 BYP53-100 BYP53-150 BYP53-200 BYP5 |
25A Silicon Power Rectifier Diode 25 A, 800 V, SILICON, RECTIFIER DIODE
25A Silicon Power Rectifier Diode 25 A, 500 V, SILICON, RECTIFIER DIODE
25A Silicon Power Rectifier Diode 25 A, 75 V, SILICON, RECTIFIER DIODE
25A Silicon Power Rectifier Diode 25 A, 150 V, SILICON, RECTIFIER DIODE
25 A, 75 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 150 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 700 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 400 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
|
ZETEX PLC
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Diodes, Inc.
|
| HD06 HD04 HD01 HD02 |
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:200V; Current Rating:40A; Voltage
TRIAC,200V V(DRM),25A I(T)RMS,TO-220
TRIAC-600VRM-25A-TO220
|
DIODES[Diodes Incorporated]
Diodes Inc.
|
| BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE.
; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA
; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
Continental Device India Limited
|
| D44VH10 D44VH-D D45VH D45VH10 |
Power 15A 80V NPN
Complementary Silicon Power Transistors
Power 15A 80V PNP
|
ON Semiconductor
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
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